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Transient changes in material conductivity due to impact ionisation in a Gunn-effect domain

Transient changes in material conductivity due to impact ionisation in a Gunn-effect domain

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An interesting phenomenon is reported which occurs when a long sample of GaAs containing a high-field domain is subjected to an increased level of drive during part of it first cycle. Under such conditions there is produced locally, at the position where the domain is situated when the overdrive is applied, an increase in the free-carrier concentration, which then decays relatively slowly (approximately 1 μs). The effect is very similar to that first observed by Owens and Kino and ascribed by them to the generation of a second stable domain while the first is in transit through the device.

References

    1. 1)
      • J.B. Gunn . Instabilities of current in III–V semiconductors. IBM J. Res. Dev.
    2. 2)
      • J.S. Heeks , A.D. Woode , C.P. Sandbank . The mechanism and device applications of high field instability in gallium arsenide. Radio Electronic Engr.
    3. 3)
      • J.S. Heeks . Some properties of the moving high field domain in Gunn effect devices. IEEE Trans.
    4. 4)
      • D.N. Butcher , W. Fawdett , C. Hilsum . A simple analysis of stable domain propagation in the Gunn effect. Brit. J. Appl. Phys.
    5. 5)
      • J.A. Copeland . Stable space charge layers in two valley semiconductors. J. Appl. Phys.
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