access icon free Erratum: Comparison of three simple field-effect-transistor models

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Inspec keywords: transistors; semiconductor junctions

Subjects: Semiconductor devices; Insulated gate field effect transistors

http://iet.metastore.ingenta.com/content/journals/10.1049/el_19660158
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Errata
This article contains an Erratum to the following content:
Comparison of three simple field-effect-transistor models