http://iet.metastore.ingenta.com
1887

Surface-oriented Gunn-effect oscillator

Surface-oriented Gunn-effect oscillator

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Coherent Gunn-effect oscillations at 3 Gc/s have been observed between coplanar contacts, with a 30 μm separation, on the surface of an epitaxial n-type GaAs wafer. By using this structure the difficulty of preparing thin GaAs wafers necessary for conventional Gunn-effect devices has been avoided; it should be possible to generate frequencies greater than 30 Gc/s using existing photolithographic processes.

References

    1. 1)
      • J.B. Gunn . IBM J.. IBM J.
    2. 2)
      • C. Hilsum . (1962) Proc. Inst. Radio Engrs..
    3. 3)
      • B.K. Ridley , T.B. Watkins . (1961) Proc. Phys. Soc..
    4. 4)
      • C. Hilsum , K.C.H. Smith , B.C. Taylor , J.R. Knight . C.W.X and K band radiation from GaAs epitaxial layers. Electronics Letters
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19650197
Loading

Related content

content/journals/10.1049/el_19650197
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address