Domain stability in the Gunn effect

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Domain stability in the Gunn effect

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© The Institution of Electrical Engineers
Published

The present theoretical and experimental knowledge of the high-field domain in the Gunn effect gives conflicting result. The letter shows that these can be reconciled by a modification to the published reasoning about domain formation.

Inspec keywords: Gunn effect; semiconductors; III-V semiconductors; gallium arsenide

Subjects: Semiconductor devices; Electrical conductivity of specific semiconductors and insulators

References

    1. 1)
      • T.M. Quist , A.G. Foyt . S band GaAs Gunn effect oscillators. Proc. Inst. Elect. Electronics Engrs.
    2. 2)
      • C. Hilsum . Transferred electron amplifiers and oscillators. Proc. Inst. Radio Engrs.
    3. 3)
      • J.B. Gunn . (1965) Instabilities of current and of potential distribution in GaAs and InP, Plasma effects in solids.
    4. 4)
      • B.K. Ridley . Specific negative resistance in solids. Proc. Phys. Soc.
    5. 5)
      • P. Butcher , W. Fawcett . Intervalley transfer of hot electrons in GaAs. Phys. Letters.
    6. 6)
      • Sandbanks, C., King, G., Heeks, J.S.: `Consideration of material and configurations for Gunn-effect devices', International conference on microwave behaviour of ferrimagnetics and plasmas, September 1965, IEE Conf. Publ. Ser. 13.
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