Nonlinear-capacitance devices

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Nonlinear-capacitance devices

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© The Institution of Electrical Engineers
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The capacitance characteristics of normal and ‘hyperabrupt’ junction diodes are first reviewed. A discontinuity in the slope of the capacitance characteristic of the field-effect transistor is then discusscd; the variation in loss in the vicinity of the pinchoff region is found to be consistent with a qualitative theory for the effect.

Inspec keywords: capacitance; semiconductor devices; semiconductor diodes; transistors; dielectric devices

Subjects: Semiconductor devices; Dielectric properties and materials

References

    1. 1)
      • W. Shockley . The theory of p–n junctions in semiconductors and p–n junction transistors. Belt Syst. Tech. J.
    2. 2)
      • Owens, A.R., Hughes, K.A.: `Signal processing with parametric delay lines', Presented at the international solid state circuits conference, 1963, Philadelphia.
    3. 3)
      • Fujitsu Ltd., Tokyo, Japan.
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