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The suppression of leakage current via surface passivation plays a critical role for GaSb-based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis of HS– ions that aide surface passivation and the re-oxidation, respectively. Upon the optimisation of sulfur passivation parameters and subsequent encapsulation with atomic layer deposition Al2O3, the surface resistivity significantly increased from 4.3 kΩ.cm to 28.6 kΩ.cm, leading to a 19.1 times drop in dark current at room temperature for the GaSb p–i–n structure. This Letter provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb-based devices.
References
-
-
1)
-
11. Heslop, S.L., Peckler, L., Muscat, A.J.: ‘Reaction of aqueous ammonium sulfide on SiGe 25%’, J. Vac. Sci. Technol., 2017, 35, (3), p. 03E110, (doi: 10.1116/1.4982223).
-
2)
-
5. Bessolov, V.N., Konenkova, E.V., Lebedev, M.V.: ‘Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation’, Mater. Sci. Eng. B., 1997, 44, (1–3), pp. 376–379, (doi: 10.1016/S0921-5107(96)01816-8).
-
3)
-
15. Higuera-Rodriguez, A., Romeira, B., Birindelli, S., et al: ‘Ultralow surface recombination velocity in passivated InGaAs/Inp nanopillars’, Nano Lett.., 2017, 17, (4), pp. 2627–2633, (doi: 10.1021/acs.nanolett.7b00430).
-
4)
-
4. Bessolov, V.N.: ‘Sulfide passivation of III–V semiconductors: kinetics of the photoelectrochemical reaction’, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., 1993, 11, (1), p. 10, (doi: 10.1116/1.586710).
-
5)
-
13. Lunt, S.R., Santangelo, P.G., Lewis, N.S.: ‘Passivation of GaAs surface recombination with organic thiols’, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., 1991, 9, (4), pp. 2333–2336, (doi: 10.1116/1.585743).
-
6)
-
9. Chen, S.M., Chiu, S.W.: ‘Electrocatalytic transformation of HS-, S2O32-, S4O62- and SO32- to SO42- by water-soluble iron porphyrins’, Electrochim. Acta, 2000, 45, (27), pp. 4399–4408, (doi: 10.1016/S0013-4686(00)00506-5).
-
7)
-
8. May, P.M., Batka, D., Hefter, G., et al: ‘Goodbye to S2- in aqueous solution’, Chem. Commun., 2018, 54, (16), pp. 1980–1983, (doi: 10.1039/C8CC00187A).
-
8)
-
7. Huang, S., Balakrishnan, G., Huffaker, D.L.: ‘Interfacial misfit array formation for GaSb growth on GaAs’, J. Appl. Phys., 2009, 105, (10), pp. 103104-1–103104-5, (doi: 10.1063/1.3129562).
-
9)
-
2. Perotin, M., Coudray, P., Gouskov, L., et al: ‘Passivation of GaSb by sulfur treatment’, J. Electron. Mater., 1994, 23, (1), pp. 7–12, (doi: 10.1007/BF02651260).
-
10)
-
1. Juang, B.C., Chen, A., Ren, D., et al: ‘Energy-Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X-Ray and Gamma-Ray Detection’, Adv. Opt. Mater., 2019, 7, (11), pp. 1–7, (doi: 10.1002/adom.201900107).
-
11)
-
6. Wu, B., Xia, G., Li, Z., et al: ‘Sulphur passivation of the InGaAsSb/GaSb photodiodes’, Appl. Phys. Lett., 2002, 80, (7), pp. 1303–1305, (doi: 10.1063/1.1448383).
-
12)
-
3. Chen, X., Xia, N., Yang, Z., et al: ‘Analysis of the influence and mechanism of sulfur passivation on the dark current of a single GaAs nanowire photodetector’, Nanotechnology, 2018, 29, (9), pp. 095201, (doi: 10.1088/1361-6528/aaa4d6).
-
13)
-
14. Alexander-Webber, J.A., Groschner, C.K., Sagade, A.A., et al: ‘Engineering the photoresponse of InAs nanowires’, ACS Appl. Mater. Interfaces, 2017, 9, (50), pp. 43993–44000, (doi: 10.1021/acsami.7b14415).
-
14)
-
12. Shin, J., Geib, K.M., Wilmsen, C.W., et al: ‘The chemistry of sulfur passivation of GaAs surfaces’, J. Vac. Sci. Technol., 1990, 8, (3), pp. 1894–1898, (doi: 10.1116/1.576822).
-
15)
-
10. Nardelli, M., Fava, G.: ‘The crystal structure of barium thiosulphate monohydrate’, Acta Crystallogr., 1962, 15, (5), pp. 477–484, (doi: 10.1107/S0365110X62001188).
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