Exploiting analogue OxRAM conductance modulation for contrast enhancement application
- Author(s): A. Kumar 1 ; S. S. Bezugam 2 ; B. Hudec 3 ; T.-H. Hou 3 ; M. Suri 2
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View affiliations
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Affiliations:
1:
Electrical Engineering , Indian Institute of Technology Delhi , New Delhi 110016 , India ;
2: Electrical Engineering , Indian Institute of Technology Delhi , New Delhi 110016 , India ;
3: Electronics Engineering , National Chiao Tung University , Hsinchu 300 , Taiwan
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Affiliations:
1:
Electrical Engineering , Indian Institute of Technology Delhi , New Delhi 110016 , India ;
- Source:
Volume 56, Issue 12,
11
June
2020,
p.
594 – 597
DOI: 10.1049/el.2020.0106 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
Inspec keywords: image enhancement; random-access storage
Other keywords: sensor-level information storage; analogue OxRAM conductance modulation; specific bi-layer OxRAM material stacks; resistance encoding; contrast enhancement application; low-contrast images; analogue oxide-based resistive memory device; light intensity; nonvolatile OxRAM resistance states
Subjects: Optical, image and video signal processing; Semiconductor storage; Computer vision and image processing techniques; Memory circuits
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