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A positive feedback gain-enhanced technique for power amplifiers has been introduced in this Letter. With the proposed circuit design method for optimal inductive feedback, a 180 GHz high-gain single-stage cascode power amplifier in a 130 nm SiGe process is implemented. The measurement results show a power gain of 10 dB and 20 GHz bandwidth with 110 mW dc power are achieved, and 6.5 dBm of output power referred to P 1dB and 3.5% collector efficiency are attained. The chip area of the power amplifier is only 0.50 × 0.48 mm2.
References
-
-
1)
-
3. Mason, S.J.: ‘Power gain in feedback amplifier’, IEEE Trans. Circuit Theory, 1954, CT-1, (2), pp. 20–25.
-
2)
-
1. Heydari, B., Adabi, E., Bohsali, M., et al: ‘Internal unilaterization technique for CMOS mm-wave amplifiers’. 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symp., Honolulu, HI, USA, June 2007, pp. 463–466.
-
3)
-
6. Khatibi, H., Khiyabani, S., Afshari, E.: ‘A 173 GHz amplifier with a 18.5 dB power gain in a 130 nm SiGe process: A systematic design of high-gain amplifiers above fmax/2’, IEEE Trans. Microw. Theory Techn., 2017, 66, (1), pp. 201–214 (doi: 10.1109/TMTT.2017.2727038).
-
4)
-
2. Tsai, Z.-M., Sun, K.-J., Vendelin, G.D., et al: ‘A new feedback method for power amplifier with unilateralization and improved output return loss’, IEEE Trans. Microw. Theory Techn., 2006, 54, (4), pp. 1590–1597 (doi: 10.1109/TMTT.2006.871347).
-
5)
-
4. Xu, Z., Gu, Q.J., Chang, M.-C.F.: ‘200 GHz CMOS amplifier working close to device fT’, Electron. Lett., 2011, 47, (11), pp. 639–641 (doi: 10.1049/el.2010.3373).
-
6)
-
5. Zhang, B., Xiong, Y.-Z., Wang, L., et al: ‘Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 mm SiGe BiCMOS’, Electron. Lett., 2012, 48, (5), pp. 257–259 (doi: 10.1049/el.2011.3882).
-
7)
-
7. Khatibi, H., Khiyabani, S., Afshari, E.: ‘A 183 GHz desensitized unbalanced cascode amplifier with 9.5 dB power gain and 10 GHz band width and −2 dBm saturation power’, Solid-State Circuits Lett., 2018, 1, (3), pp. 58–61 (doi: 10.1109/LSSC.2018.2827879).
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content/journals/10.1049/el.2019.4155
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180 GHz high-gain cascode power amplifier in a 130 nm SiGe process