The authors report, for the first time, a novel SiGe/Si n-type hetero nanotube (HNT) junctionless field-effect transistor (JLFET), which leads to a remarkably enhanced performance below the sub-10 nm gate length. It is shown that valence band discontinuity in the HNT JLFET causes tunnelling width of the channel–drain interface to increase and therefore diminishes the lateral tunnelling of electrons in the OFF state. The impact of high-κ spacers and core gate diameter on the dynamic performance of HNT JLFET has also been studied. They show that the inclusion of high-κ spacers does not affect the dynamic performance of the HNT JLFET. It is demonstrated using calibrated 2D simulations that the proposed device exhibits a smaller value of DIBL 4 mV/V, sub-threshold slope almost 60 mV/decade, and an improved I _ON/I _OFF ratio of ∼10¹² even for sub-10 nm gate lengths.

References

1. 1)
  - 20. Hanna, A.N., Hossain, H.M., Hussain, M.M.: ‘Inas/Si heterojunction nanotube tunnel transistors’, Sci. Rep., 2015, 5, pp. 1–7 (doi: 10.1038/srep09843).
2. 2)
  - 3. Moon, D., Choi, S.J., Duarte, J.P., et al: ‘Investigation of silicon nanowire gate-all-around junctionless transistors built on a bulk substrate’, Trans. Electron Devices, 2013, 60, (4), pp. 1355–1360 (doi: 10.1109/TED.2013.2247763).
3. 3)
  - 8. Xiang, J., Lu, W., Hu, Y.J., et al: ‘Ge/Si nanowire heterostructures as high-performance field-effect transistors’, Nature, 2006, 441, (7092), pp. 489–493 (doi: 10.1038/nature04796).
4. 4)
  - 9. D'Amico, P., Marconcini, P., Fiori, G., et al: ‘Engineering interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling’, Trans. Nanotechnol., 2013, 12, (5), pp. 839–842 (doi: 10.1109/TNANO.2013.2275167).
5. 5)
  - 14. Gnani, E., Gnudi, A., Reggiani, S., et al: ‘Theory of the junctionless nanowire FET’, IEEE Trans. Electron Devices, 2011, 58, (9), pp. 2903–2910 (doi: 10.1109/TED.2011.2159608).
6. 6)
  - 12. Nishiyama, A., Matsuzawa, K., Takagi, S.: ‘SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-/spl mu/m p-channel MOSFETs’, Trans. Electron Devices, 2001, 48, (6), pp. 1114–1120 (doi: 10.1109/16.925236).
7. 7)
  - 6. Tekleab, D.: ‘Device performance of silicon nanotube field effect transistor’, IEEE Electon Device Lett., 2014, 35, (5), pp. 506–508 (doi: 10.1109/LED.2014.2310175).
8. 8)
  - 7. Gundapaneni, S., Bajaj, M., Pandey, R.K., et al: ‘Effect of band-to-band tunnelling on junctionless transistors’, IEEE Trans. Electron Devices, 2012, 59, (4), pp. 1023–1029 (doi: 10.1109/TED.2012.2185800).
9. 9)
  - 15. Han, M.-H., Chang, C.-Y., Jhan, Y.-R., et al: ‘Characteristic of p-type junctionless gate-all-around nanowire transistor and sensitivity analysis’, IEEE Electron Device Lett., 2013, 34, (2), pp. 157–159 (doi: 10.1109/LED.2012.2229105).
10. 10)
  - 5. Sahay, S., Kumar, M.J.: ‘Insight into lateral band-to-band-tunneling in nanowire junctionless FETs’, Trans. Electron Devices, 2016, 63, (10), pp. 4138–4142 (doi: 10.1109/TED.2016.2601239).
11. 11)
  - 3. Ionescu, A., Riel, M.: ‘Tunnel field-effect transistors as energy-efficient electronic switches’, Nature Publishing, 2011, 479, pp. 329–337 (doi: 10.1038/nature10679).
12. 12)
  - 31. Asthana, P.K., Ghosh, B., Goswami, Y., et al: ‘Highspeed and low-power ultradeep-submicrometer III-V heterojunctionless tunnel field-effect transistor’, IEEE Trans. Electron Devices, 2014, 61, (2), pp. 479–486 (doi: 10.1109/TED.2013.2295238).
13. 13)
  - 6. Sahay, S., Kumar, M.J.: ‘Diameter dependence of leakage current in nanowire junctionless field effect transistors’, Trans. Electron Devices, 2017, 64, (3), pp. 1330–1335 (doi: 10.1109/TED.2016.2645640).

SiGe/Si hetero nanotube JLFET for improved performance: proposal and investigation

References

Related content