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access icon free Layer-dependent resistance variability assessment on 2048 8-layer 3D vertical RRAMs

© The Institution of Engineering and Technology
Received 13/05/2019, Published 16/07/2019

Non-filament 3D vertical RRAM (VRRAM) is a promising technology for emerging high-density memory applications. In this Letter, the layer-dependent resistance variability at both low resistance state (LRS) and high resistance state (HRS) is assessed on state-of-the-art 8-layer 3D VRRAMs. 2048 devices are measured with the aid of an FPGA-controlled relay matrix which enables automated switching of devices without changing the cabling. The results show LRS exhibits little layer dependence while both the average and the standard variation of HRS decrease from the top layer to the bottom layer. A qualitative speculation is proposed to explain the observation based on the high-resolution transmission electronic microscope image. This work is beneficial for future 3D VRRAM circuit design and performance improvement.

Inspec keywords: field programmable gate arrays; resistive RAM; three-dimensional integrated circuits; transmission electron microscopy

Other keywords: state-of-the-art 8-layer 3D VRRAM; layer-dependent resistance variability assessment; FPGA-controlled relay matrix; high resistance state; LRS; automated switching; high-resolution transmission electronic microscope image; low resistance state; nonfilament 3D vertical RRAM; high-density memory applications; 3D VRRAM circuit design; 8-layer 3D vertical RRAM

Subjects: Semiconductor storage; Logic and switching circuits; Memory circuits; Logic circuits

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2019.1556
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