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access icon free Read-decoupled 8T1R non-volatile SRAM with dual-mode option and high restore yield

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References

    1. 1)
      • 4. Shyh-Shyuan, S., Chia-Chen, K., Meng-Fan, C., et al: ‘A ReRAM integrated 7T2R non-volatile SRAM for normally-off computing application’. Proc. IEEE Solid-State Circuits Conf., Sentosa Island, Singapore, 2013, pp. 245248.
    2. 2)
      • 7. Albert, L., Meng-Fan, C., Chien-Chen, L., et al: ‘RRAM-based 7T1R nonvolatile SRAM with 2x reductionin store energy and 94x reduction in restore energy for frequent-off instant-on applications’. Proc. IEEE Symp. on VLSI Circuits, Kyoto, Japan, 2015, pp. C76C77.
    3. 3)
      • 6. Tosson, A.M.S., Abdelwahed, T., Neale, A., et al: ‘8T1R: a novel low-power high-speed RRAM-based non-volatile SRAM design’. 2016 International Great Lakes Symposium on VLSI (GLSVLSI), Boston, MA, USA, May 2016, pp. 239244.
    4. 4)
    5. 5)
      • 1. Yamamoto, S., Shuto, Y., Sugahara, S., et al: ‘Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices’. IEEE Custom Integrated Circuits Conf., Rome, Italy, September 2009, pp. 531534.
    6. 6)
    7. 7)
      • 3. Wei, W., Gibby, A., Wang, Z., et al: ‘Nonvolatile SRAM cell’. Proc. Int. Electron Devices Meeting, San Francisco, CA, USA, December 2006, pp. 14.
    8. 8)
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