Substrate resistivity influence on silicon–germanium phototransistor performance

Z.G. Tegegne; J. Nanni; C. Viana; G. Tartarini; J.-L. Polleux

Substrate resistivity influence on silicon–germanium phototransistor performance

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Author(s): Z.G. Tegegne¹ ; J. Nanni¹ ; C. Viana¹ ; G. Tartarini² ; J.-L. Polleux¹
- Affiliations: 1: ESYCOM Laboratory , Université Paris-Est, ESIEE Paris , 93160, Noisy-le-Grand , France ;
  2: Department of Electrical, Electronic and Information Engineering (DEI) , University of Bologna , 40136 Bologna , Italy
Source: Volume 55, Issue 11, 30 May 2019, p. 656 – 658
DOI: 10.1049/el.2019.0203 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 14/01/2019, Published 08/05/2019

This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).

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