access icon free Low-loss reverse blocking IGBT with PNM structure and trench collectors

© The Institution of Engineering and Technology
Received 22/11/2018, Published 30/01/2019
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A reverse blocking insulated gate bipolar transistor (IGBT) with partially narrow mesa (PNM) structure and trench collectors is proposed. An n-type carrier stored (n-cs) layer is introduced between two trench gates with the bulgy bottom, forming the PNM structure, which nicely shields high electric field from the n-cs layer at the forward blocking state. Hence, a highly doped n-cs layer can be used to enhance the carrier storage effect in the n-drift region at on-state to reduce the on-state voltage [V CE(sat)]. Besides, an n-buffer layer is introduced between two trench collectors at the back side, acting as a field-stop (FS) layer at forwarding blocking state. At the reverse blocking state, the trench collectors shield high electric field from the n-buffer region and the n-cs layer acts as an FS layer, which ensures a high reverse breakdown voltage. Numerical simulation results show that the 1.4 kV proposed reverse blocking-IGBT can use a 38% thinner n-drift region and obtain a 45% lower V CE(sat) than the conventional counterpart.

Inspec keywords: insulated gate bipolar transistors; semiconductor doping; buffer layers; semiconductor device breakdown

Other keywords: PNM structure; n-buffer layer; n-drift region; carrier storage effect; partially narrow mesa structure; n-type carrier stored layer; low-loss reverse blocking IGBT; reverse breakdown voltage; trench collectors; field-stop layer; reverse blocking insulated gate bipolar transistor; voltage 1.4 kV

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing; Bipolar transistors; Semiconductor doping

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