http://iet.metastore.ingenta.com
1887

200°C normally-off AlGaN/GaN MISFET with 321mA/mm drain current density and 1055V breakdown voltage

200°C normally-off AlGaN/GaN MISFET with 321mA/mm drain current density and 1055V breakdown voltage

For access to this article, please select a purchase option:

Buy eFirst article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

There is no abstract available for this article.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.7758
Loading

Related content

content/journals/10.1049/el.2018.7758
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address