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212-Gbit/s 2:1 multiplexing selector realised in InP DHBT

212-Gbit/s 2:1 multiplexing selector realised in InP DHBT

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In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7-µm indium phosphide (InP) double-heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200-Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.7545
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