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© The Institution of Engineering and Technology
Published 12/10/2018
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There is no abstract available for this article.

Inspec keywords: power control; millimetre wave power amplifiers; field effect MIMIC; data communication; semiconductor materials; electrostatic discharge; 5G mobile communication; Ge-Si alloys; transmission lines; BiCMOS analogue integrated circuits

Other keywords: Gb/s data transmission rates; silicon-germanium BiCMOS power amplifier; SiGe; BiCMOS power amplifier; transmission-line PA; mm-wave power control; power coupler; electrostatic discharge; ESD; mm-wave data transmission; 5G wireless networks; low insertion loss

Subjects: Microwave integrated circuits; Mixed technology integrated circuits; Power and energy control; Amplifiers; Electrostatics

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.7223
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This article has the following associated article(s):
69–78 GHz ESD-protected SiGe BiCMOS PA with 30 dB automatic level control for mm-wave 5G applications