Quantum dot infrared photodetectors (QDIPs) are receiving attention as next generation infrared photodetectors that offer high-sensitivity and high-temperature operation. The realisation of QDIPs on silicon (Si) substrates offer further great advantages in terms of cost reduction and higher-resolution focal plane arrays. Indium arsenide/gallium arsenide QDIPs grown directly on on-axis Si (100) substrates are demonstrated. These are expected to further reduce fabrication costs by utilising both the monolithic integration of QDIPs with Si readout integrated circuits and also the bare substrate cost (compared with offcut Si substrates). In the device, the peak detectivity at a temperature of 32 K is measured to be 5.8 × 10⁷ cm Hz^1/2/W of 6.2 μm at a bias 0.6 V, with a corresponding responsivity of 27 mA/W. This result indicates that QD structures directly grown on on-axis Si substrates are very promising for the realisation of high-performance QDIPs with low fabrication cost.

References

1. 1)
  - 3. Krishna, S.: ‘Quantum dots-in-a-well infrared photodetectors’, J. Phys. D, Appl. Phys., 2005, 38, pp. 2142–2150 (doi: 10.1088/0022-3727/38/13/010).
2. 2)
  - 7. Chen, W., Deng, Z., Guo, D., et al: ‘Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate’, J. Lightwave Technol., 2018, 36, (13), pp. 2572–2581 (doi: 10.1109/JLT.2018.2811388).
3. 3)
  - 12. Asano, T., Madhukar, A., Mahalingam, K., et al: ‘Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors’, J. Appl. Phys., 2008, 104, pp. 113115-1–113115-5 (doi: 10.1063/1.3039799).
4. 4)
  - 5. Frigerio, J., Isella, G., Bietti, S., et al: ‘Multispectral imaging sensors integrated on silicon’, SPIE. Newsroom, 2013, doi: 10.1117/2.1201307.004861.
5. 5)
  - 9. Norman, J., Kennedy, M.J., Selvidge, J., et al: ‘Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si’, Opt. Express, 2017, 25, (4), pp. 3927–3934 (doi: 10.1364/OE.25.003927).
6. 6)
  - 8. Liu, A.Y., Peters, J., Huang, X., et al: ‘Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si’, Opt. Lett., 2017, 42, (2), pp. 338–341 (doi: 10.1364/OL.42.000338).
7. 7)
  - 10. Chen, S., Liao, M., Tang, M., et al: ‘Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates’, Opt. Express, 2017, 25, (5), pp. 4632–4639 (doi: 10.1364/OE.25.004632).
8. 8)
  - 2. Ryzhii, V.: ‘The theory of quantum-dot infrared phototransistors’, Semicond. Sci. Technol., 1996, 11, pp. 759–765 (doi: 10.1088/0268-1242/11/5/018).
9. 9)
  - 11. Kwoen, J., Jang, B., Lee, J., et al: ‘All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)’, Opt. Express, 2018, 26, (9), pp. 11568–11576 (doi: 10.1364/OE.26.011568).
10. 10)
  - 6. Rogalski, A., Antoszewski, J., Faraone, L.: ‘Third-generation infrared photodetector arrays’, J. Appl. Phys., 2009, 105, p. 091101, (doi: 10.1063/1.3099572).
11. 11)
  - 4. Liao, C.-C., Tang, S.-F., Chen, T.-S., et al: ‘Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density’, Proc. SPIE, 2006, 6119, pp. 611905-1–611905-7, doi: 10.1117/12.644422.
12. 12)
  - 6. Wu, J., Jiang, Q., Chen, S., et al: ‘Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates’, ACS Photonics, 2016, 3, pp. 749–753 (doi: 10.1021/acsphotonics.6b00076).

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InAs/GaAs quantum dot infrared photodetectors on on-axis Si (100) substrates

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