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access icon openaccess Efficient base driver circuit for silicon carbide bipolar junction transistors

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References

    1. 1)
    2. 2)
      • 2. Singh, R., Sundaresan, S., Lieser, E., et al: ‘1200 V sic ‘super’ junction transistors operating at 250°C with extremely low energy losses for power conversion applications’. Proc. IEEE 27th Annual Applied Power Electronics Conf. and Exposition, Orlando, FL, USA, February 2012, pp. 25162520.
    3. 3)
    4. 4)
    5. 5)
    6. 6)
      • 6. Rodriguez, A., Vazquez, A., Lamar, D.G., et al: ‘Increasing the voltage and the switching frequency in a dual active bridge using a normally-on SiC JFET in a cascode configuration’. Proc. IEEE 5th Energy Conversion Congress and Exposition, Denver, CO, USA, September 2013, pp. 49054911.
    7. 7)
      • 7. Peftitsis, D., Rabkowski, J.: ‘Gate and base drivers for silicon carbide power transistors: an overview’, Trans. Power Electron., 2016, 31, (10), pp. 71947213.
    8. 8)
      • 8. Frankeser, S., Hiller, S., Lutz, J., et al: ‘Proportional driver for SiC BJT's in electric vehicle inverter application’. Proc. Int. Exhibition and Conf. for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, May 2014, pp. 8289.
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