Razzak, T.; Hwang, S.; Coleman, A.; Bajaj, S.; Xue, H.; Zhang, Y.; Jamal-Eddine, Z.; Sohel, S.H.; Lu, W.; Khan, A.; Rajan, S.: 'RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors', Electronics Letters, 2018, 54, (23), p. 1351-1353, DOI: 10.1049/el.2018.6897 IET Digital Library, https://digital-library.theiet.org/;jsessionid=1pzfxygvx2wwe.x-iet-live-01content/journals/10.1049/el.2018.6897