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RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors

RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors

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The first report is presented on the RF operation of AlGaN channel transistor with Al-composition above 80%. The reported device is a polarisation-graded field effect transistor (PolFET) featuring an ultra-wide bandgap (UWBG) AlGaN channel with Al-composition grading from 65 to 82%. Transistors with a gate length of 0.8 μm were fabricated, with a current density of 265 mA/mm, the highest observed for AlGaN channel transistor with Al-composition above 80%, and f T/f MAX of 5.4/14.2 GHz. This demonstration of RF operation of polarisation-graded transistor provides a direction for achieving ultra-wide bandgap AlGaN based devices for high performance RF and power switching applications.


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      • 4. Johnson, E.: ‘Physical limitations on frequency and power parameters of transistors’. 1958 IRE Int. Convention Record, New York, USA, March 1966, pp. 2734, doi: 10.1109/IRECON.1965.1147520.
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      • 10. Schroder, D.K.: ‘Semiconductor material and device characterization’ (John Wiley & Sons Inc., Hoboken, NJ, USA, 2006).
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