Low-temperature-dependence CMOS linear driver with serial peripheral interface for 64-Gbaud ultra-low power coherent optical transmitters

Low-temperature-dependence CMOS linear driver with serial peripheral interface for 64-Gbaud ultra-low power coherent optical transmitters

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The authors used 65-nm CMOS technology to develop a linear four-channel driver IC with low temperature dependence and ultra-low power dissipation for 64-Gbaud coherent optical transmitters. The driver showed more than a 48-GHz 3-dB electrical bandwidth and less than 1-W power consumption in four-channel operation. By employing a circuit that suppresses the temperature dependence, they achieved 3-dB electrical bandwidth variation of 3.0 GHz and the gain variation of 1.5 dB under the −5 to 75°C and ±5% supply voltage variation conditions. The CMOS driver has all the necessary functions for a high-bandwidth coherent driver modulator such as a gain control, peaking control, peak detection and temperature monitoring, all of which functions can be controlled by a serial peripheral interface. A fabricated sub-assembly consisting of the CMOS driver and an InP modulator showed a 48-GHz 3-dB electro-optic bandwidth.


    1. 1)
      • 1. Wolf, N., Yan, L., Choi, J.-H., et al: ‘Electro-optical co-design to minimize power consumption of a 32 GBd optical IQ-transmitter using InP MZ-modulators’. Compound Semiconductor Integrated Circuit Symp. (CSICS), New Orleans, LA, USA, October 2015, doi: 10.1109/CSICS.2015.7314499.
    2. 2)
      • 2. Temporiti, E., Minoia, G., Repossi, M., et al: ‘A 56 Gb/s 300 mW silicon-photonics transmitter in 3D-integrated PIC25G and 55 nm BiCMOS techonologies’. IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, CA, USA, February 2016, doi: 10.1109/ISSCC.2016.7418078.
    3. 3)
      • 3. Nakano, S., Nagatani, M., Tanaka, K., et al: ‘A 180-mW linear MZM driver in CMOS for single-carrier 400-Gb/s coherent optical transmitter’. European Conf. on Opt. Communication (ECOC), W.1.F.3, Gothenburg, Sweden, September 2017, doi: 10.1109/ECOC.2017.8346186.
    4. 4)
      • 4. Nakano, S., Nagatani, M., Nogawa, M., et al: ‘A 2.25-mW/Gb/s 80-Gb/s-PAM4 linear driver with a single supply using stacked current-mode architecture in 65-nm CMOS’. Symp. on Very-Large-Scale Integration (VLSI) Circuits, C25-3, Kyoto, Japan, June 2017, doi: 10.23919/VLSIC.2017.8008525.
    5. 5)
      • 5. Nakano, S., Nogawa, M., Nosaka, H., et al: ‘25-Gb/s 480-mW CMOS modulator driver using area-efficient 3D inductor peaking’. IEEE Asian Solid-State Circuits Conf. (A-SSCC), 17-5, Xiamen, China, November 2015, doi: 10.1109/ASSCC.2015.7387470.
    6. 6)
    7. 7)
      • 7. Letal, G., Prosyk, K., Millett, R., et al: ‘Low loss InP C-band IQ modulator with 40 GHz bandwidth and 1.5 V Vp’. Optical Fiber Communications Conf. and Exhibition (OFC), Th4E.3, Los Angeles, USA, March 2015, doi: 10.1364/OFC.2015.TH4E.3.

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