InAs-based quantum cascade lasers emitting close to 25 µm

Z. Loghmari; M. Bahriz; A. Meguekam; R. Teissier; A.N. Baranov

InAs-based quantum cascade lasers emitting close to 25 µm

View Fulltext

Author(s): Z. Loghmari¹ ; M. Bahriz¹ ; A. Meguekam¹ ; R. Teissier¹ ; A.N. Baranov¹
- Affiliations: 1: IES, Université de Montpellier, CNRS , Montpellier , France
Source: Volume 55, Issue 3, 07 February 2019, p. 144 – 146
DOI: 10.1049/el.2018.6413 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 24/07/2018, Published 17/12/2018

Indium arsenide (InAs)-based quantum cascade lasers (QCLs) operating close to 25 µm are reported. Thick n-doped InAs cladding layers were used for optical confinement. Fabry–Perot lasers exhibited a threshold current density as low as 1.1 kA/cm² in pulsed mode at 80 K. The lasers operated in this regime up to 240 K, where the threshold current density increased up to 1.7 kA/cm². These are the lowest threshold current densities for QCLs operating above 20 µm.

References

1. 1)
  - 18. Ordal, M.A., Long, L.L., Bell, R.J., et al: ‘Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared’, Appl. Opt., 1983, 22, (7), pp. 1099–1119 (doi: 10.1364/AO.22.001099).
2. 2)
  - 10. Li, Y.B., Stradling, R.A., Knight, T., et al: ‘Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy’, Semicond. Sci. Technol., 1993, 8, (1), p. 101, (doi: 10.1088/0268-1242/8/1/017).
3. 3)
  - 3. Ohtani, K., Beck, M., Süess, M.J., et al: ‘Far-infrared quantum cascade lasers operating in the AlAs phonon reststrahlen band’, ACS Photonics, 2016, 3, (12), pp. 2280–2284, (doi: 10.1021/acsphotonics.6b00750).
4. 4)
  - 8. Sirtori, C., Gmachl, C., Capasso, F., et al: ‘Long-wavelength (λ≈8–11.5 µm) semiconductor lasers with waveguides based on surface plasmons’, Opt. Lett., 1998, 23, (17), pp. 1366–1368, (doi: 10.1364/OL.23.001366).
5. 5)
  - 2. Ohtani, K., Beck, M., Faist, J.: ‘Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm’, Appl. Phys. Lett., 2014, 105, (12), p. 121115, (doi: 10.1063/1.4896542).
6. 6)
  - 7. Bahriz, M., Lollia, G., Baranov, A.N., et al: ‘High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide’, Opt. Express, 2015, 23, (2), pp. 1523–1528 (doi: 10.1364/OE.23.001523).
7. 7)
  - 5. Benveniste, E., Vasanelli, A., Delteil, A., et al: ‘Influence of the material parameters on quantum cascade devices’, Appl. Phys. Lett., 2008, 93, (13), p. 131108, (doi: 10.1063/1.2991447).
8. 8)
  - 1. Kittel, C., Fong, C.Y.: ‘Quantum theory of solids’, vol. 3, (Wiley, New York, 1963).
9. 9)
  - 4. Ulrich, J., Kreuter, J., Schrenk, W., et al: ‘Long wavelength (15 and 23 μm) GaAs/AlGaAs quantum cascade lasers’, Appl. Phys. Lett., 2002, 80, (20), pp. 3691–3693, (doi: 10.1063/1.1481236).
10. 10)
  - 7. Unterrainer, K., Colombelli, R., Gmachl, C., et al: ‘Quantum cascade lasers with double metal-semiconductor waveguide resonators’, Appl. Phys. Lett., 2002, 80, (17), pp. 3060–3062, doi: 10.1063/1.4861465 (doi: 10.1063/1.1469657).

Correspondence

This article has following corresponding article(s):

in brief

Login

Not registered yet?

Share

Tools

Login to add to favourites

Key

InAs-based quantum cascade lasers emitting close to 25 µm

References

Related content