© The Institution of Engineering and Technology
New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer.
References
-
-
1)
-
5. Qiu, B., Tian, Z., Vallabhaneni, A., et al: ‘First-principles simulation of electron mean-free-path spectra and thermoelectric properties in silicon’, Europhys. Lett., 2015, 109, (5), p. 57006 (doi: 10.1209/0295-5075/109/57006).
-
2)
-
1. Fitriani Ovik, R., Long, B., et al: ‘A review on nanostructures of high-temperature thermoelectric materials for waste heat recovery’, Renew. Sustain. Energy Rev., 2016, 64, pp. 635–659 (doi: 10.1016/j.rser.2016.06.035).
-
3)
-
3. Pichanusakorn, P., Bandaru, P.: ‘Nanostructured thermoelectrics’, Mater. Sci. Eng. R, Rep., 2010, 67, (2–4), pp. 19–63 (doi: 10.1016/j.mser.2009.10.001).
-
4)
-
4. Zebarjadi, M., Esfarjani, K., Dresselhaus, M.S., et al: ‘Perspectives on thermoelectrics: from fundamentals to device applications’, Energy Environ. Sci., 2012, 5, (1), pp. 5147–5162 (doi: 10.1039/C1EE02497C).
-
5)
-
6. Harrison, P., Valavanis, A.: ‘Quantum wells, wires and dots: theoretical and computational physics of semiconductor nanostructures’ (John Wiley & Sons, West Sussex, United Kingdom, 2016, 4th edn.).
-
6)
-
2. Liu, W., Yan, X., Chen, G., et al: ‘Recent advances in thermoelectric nanocomposites’, Nano Energy, 2012, 1, (1), pp. 42–56 (doi: 10.1016/j.nanoen.2011.10.001).
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Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers