access icon free Ultra-low-voltage low-power dynamic comparator with forward body bias scheme for SAR ADC

An ultra-low-voltage two-stage dynamic comparator is proposed with a forward body bias (FBB) scheme for successive approximation register (SAR) analogue-to-digital converters (ADCs). The proposed FBB scheme for a preamplifier and latch stage reduces the delay time remarkably under a low supply voltage. At 0.4 V, the power consumption is 4.48 nW, and the delay can be decreased to 593.9 ns for ΔV in = 0.1 mV and f clk = 100 kHz. The RMS equivalent input-referred noise of the comparator is 0.136 mV. The total offset is 13.7 mV, and offset fluctuation is 0.183 mV with the proposed structure. Both the input-referred noise and offset fluctuation are <0.5 least-significant bit for a 10-bit SAR ADC at 0.4 V.

Inspec keywords: flip-flops; integrated circuit design; analogue-digital conversion; preamplifiers; low-power electronics; comparators (circuits)

Other keywords: voltage 0.1 mV; RMS equivalent input-referred noise; voltage 0.183 mV; power consumption; low supply voltage; word length 10 bit; forward body bias scheme; power 4.48 nW; preamplifier; voltage 13.7 mV; frequency 100.0 kHz; voltage 0.136 mV; delay time; SAR ADC; analogue-to-digital converters; time 593.9 ns; ultra-low-voltage low-power dynamic comparator; input-referred noise; voltage 0.4 V; successive approximation register; FBB scheme

Subjects: Logic circuits; A/D and D/A convertors; A/D and D/A convertors; Other analogue circuits; Amplifiers; Digital circuit design, modelling and testing; Logic and switching circuits; Electrical/electronic equipment (energy utilisation); Other digital circuits

References

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      • 8. Chiu, P.-F., Zimmer, B., Nikolić, B.: ‘A double-tail sense amplifier for low-voltage SRAM in 28 nm technology’. IEEE Asian Solid-State Circuits Conf., Toyama, Japan, November 2016, pp. 181184.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.6340
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