http://iet.metastore.ingenta.com
1887

Study on switch-leakage-induced dark offset of ambient light sensor

Study on switch-leakage-induced dark offset of ambient light sensor

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The dark offset which is the reference value of an ambient light sensor is analysed. It varies across the wafer when the temperature is increased because of the leakage current of switch transistors. The difference between before and after wafer revisions shows the clue of leakage current. Modern fabrication processes which change the threshold voltage of switch transistors are surveyed. To explain the discrepancy between test and survey data, some other process issues are discussed.

References

    1. 1)
      • 1. ENERGY STAR® program requirements product specification for televisions. Available at http://www.energystar.gov/ia/partners/prod_development/revisions/downloads/television/Fina_lDraft_Version_6_TVs_Specification.pdf, accessed January 2018.
    2. 2)
      • 2. Su, K.W., Sheu, Y.M., Lin, C.K., et al: ‘A scalable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics’. Proc. IEEE Custom Integrated Circuits Conf., San Jose, CA, USA, September 2003, pp. 245248.
    3. 3)
      • 3. Drennan, P.G., Kniffin, M.L., Locascio, D.R., et al: ‘Implications of proximity effects for analog design’. Proc. IEEE Custom Integrated Circuits Conf., San Jose, CA, USA, September 2006, pp. 169176.
    4. 4)
      • 4. Sheu, Y.-M., Su, K.W., Yang, S.J., et al: ‘Modeling well edge proximity effect on highly scaled MOSFETs’. Proc. IEEE Custom Integrated Circuits Conf., San Jose, CA, USA, September 2005, pp. 831834.
    5. 5)
    6. 6)
    7. 7)
      • 7. Polinsky, M.A.: ‘Monolithic light detector’. U.S. Patent 4 096 512, 20 June 1978.
    8. 8)
      • 8. Boning, D., Lee, B., Oji, C., et al: ‘Pattern dependent modeling for CMP optimization and control’. MRS Spring Meeting, Proc. Symp. P: Chemical Mechanical Polishing, San Francisco, CA, USA, April 1999, pp. 113.
    9. 9)
    10. 10)
    11. 11)
    12. 12)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.5547
Loading

Related content

content/journals/10.1049/el.2018.5547
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address