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Study on switch-leakage-induced dark offset of ambient light sensor

Study on switch-leakage-induced dark offset of ambient light sensor

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© The Institution of Engineering and Technology
Received 26/05/2018, Published 06/02/2019

The dark offset which is the reference value of an ambient light sensor is analysed. It varies across the wafer when the temperature is increased because of the leakage current of switch transistors. The difference between before and after wafer revisions shows the clue of leakage current. Modern fabrication processes which change the threshold voltage of switch transistors are surveyed. To explain the discrepancy between test and survey data, some other process issues are discussed.

Inspec keywords: field effect transistor switches; leakage currents; optical sensors

Other keywords: wafer revisions; switch-leakage-induced dark offset; ambient light sensor analysis; switch transistors; leakage current

Subjects: Relays and switches; Other field effect devices; Sensing devices and transducers

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