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Four-bit W-band switched line phase shifter in 90 nm SiGe

Four-bit W-band switched line phase shifter in 90 nm SiGe

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A switched delay line phase shifter implemented in a 90 nm SiGe BiCMOS process utilising PIN diodes is presented. The 4-bit phase shifter utilises four SP4T switches for a simplified architecture. The frequency of operation is from 75 to 100 GHz, and the simulated input referred P1dB is 28.5 dBm. This type of phase shifter is especially suitable for high power transmit linear phased arrays. The chip occupies an area of 2.76 mm2 including the pads.

References

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    2. 2)
      • 2. Sarkas, I., Khanpour, M., Tomkins, A., et al: ‘W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped I-Q phase shifters’. Radio Frequency Integrated Circuits Symp., Boston, MA, 2009, pp. 441444.
    3. 3)
      • 3. Yang, J.G., Lee, J., Yang, K.: ‘A W-band InGaAs PIN-MMIC digital phase-shifter using a switched transmission-line structure’. 2012 Intl. Conf. Indium Phosphide and Related Materials, Santa Barbara, CA, 2012, pp. 99101.
    4. 4)
    5. 5)
      • 5. Song, P., Schmid, R.L., Ulusoy, A.Ç., et al: ‘A high-power, low-loss W-band SPDT switch using SiGe PIN diodes’. Radio Frequency Integrated Circuits Symp., Tampa, FL, 2014, pp. 195198.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.5380
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