Layout influence on microwave performance of graphene field effect transistors

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Author(s): M.A. Giambra¹ ; A. Benfante² ; L. Zeiss² ; R. Pernice² ; V. Miseikis¹ ; W.H.P. Pernice³ ; M.H. Jang⁴ ; J.-H. Ahn⁴ ; A.C. Cino² ; S. Stivala² ; E. Calandra² ; A.C. Busacca² ; R. Danneau⁵
- Affiliations: 1: CNIT-Consorzio Nazionale Interuniversitario per le Telecomunicazioni , via Moruzzi 1 , 56124 Pisa , Italy ;
  2: Department of Energy , Information engineering and Mathematical models (DEIM) , University of Palermo , Viale delle Scienze , Building 9 , 90128 Palermo , Italy ;
  3: Institute of Physics, University of Münster , Münster 48149 , Germany ;
  4: School of Electrical and Electronic Engineering, Yonsei University , Seoul , Republic of Korea ;
  5: Institute of Nanotechnology, Karlsruhe Institute of Technology , 76021 Karlsruhe , Germany
Source: Volume 54, Issue 16, 09 August 2018, p. 984 – 986
DOI: 10.1049/el.2018.5113 , Print ISSN 0013-5194, Online ISSN 1350-911X

The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.

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Correspondence

This article has following corresponding article(s):

graphene gate

Layout influence on microwave performance of graphene field effect transistors

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