Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer

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We fabricated Pt-functionalised hydrogen gas sensors on AlGaN/GaN heterojunction platform and investigated the influence of GaN-cap layer on the sensing characteristics. Pt-Schottky diodes with GaN-cap layer exhibited a larger change of Schottky barrier height than ones with no GaN-cap layer when hydrogen gas was detected. Technology computer-aided design simulation indicated that the increase of electron concentration at heterojunction can be magnified by a larger change of barrier height. The AlGaN/GaN FET-type sensors with Pt catalyst on the gate area demonstrated significant enhancement of hydrogen gas sensitivity from 16 to 35% at 200°C when GaN cap layer was employed.


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