© The Institution of Engineering and Technology
A highly linear and efficient CMOS power amplifier (PA) with adaptive auxiliary amplifier control (AAAC) is presented, which makes the common-gate transistor of an auxiliary amplifier operate in the saturation region for overall output powers. This leads to decrease the AM–PM distortion by reducing the variation of the output susceptance. In addition, the AAAC reduces the current consumption for all power ranges by controlling the auxiliary amplifier. The PA is fully integrated with all matching networks in a 0.18 μm CMOS process. It was measured with an 802.11n 64-QAM MCS7 signal. It achieved a maximum average power of 19.9 dBm with a power-added efficiency of 28% under an error-vector magnitude of −25 dB.
References
-
-
1)
-
6. Kang, S., Baek, D., Hong, S.: ‘A 5 GHz WLAN RF CMOS power amplifier with a parallel-cascoded configuration and an active feedback linearizer’, Trans. Microw. Theory Tech., 2017, 65, (9), pp. 3230–3244 (doi: 10.1109/TMTT.2017.2691766).
-
2)
-
7. Aikio, J.P., Rahkonen, T.: ‘A comprehensive analysis of AM–AM and AM–PM conversion in an LDMOS RF power amplifier’, Trans. Microw. Theory Tech., 1999, 57, (2), pp. 262–270 (doi: 10.1109/TMTT.2008.2011161).
-
3)
-
8. Afsahi, A., Larson, L.E.: ‘Monolithic power-combining techniques for watt-level 2.4 GHz CMOS power amplifiers for WLAN applications’, IEEE Trans. Microw. Theory Tech., 2013, 61, (3), pp. 1247–1260 (doi: 10.1109/TMTT.2013.2238245).
-
4)
-
4. Yin, Y., Yu, X., Wang, Z., et al: ‘An efficiency-enhanced stacked 2.4 GHz CMOS power amplifier with mode switching scheme for WLAN applications’, Trans. Microw. Theory Tech., 2015, 63, (2), pp. 672–682 (doi: 10.1109/TMTT.2014.2387838).
-
5)
-
2. Ryu, N., Park, B., Jeong, Y.: ‘A fully integrated high efficiency RF power amplifier for WLAN application in 40 nm standard CMOS process’, Microw. Wirel. Compon. Lett., 2015, 25, (6), pp. 382–384 (doi: 10.1109/LMWC.2015.2421351).
-
6)
-
5. Wongkomet, N., Tee, L., Gray, P.R.: ‘A + 31.5 dBm CMOS RF Doherty power amplifier for wireless communications’, J. Solid-State Circuits, 2006, 41, (12), pp. 2852–2859 (doi: 10.1109/JSSC.2006.884832).
-
7)
-
3. Ahn, H., Baek, S., Nam, I., et al: ‘A fully integrated dual-mode CMOS power amplifier with an autotransformer-based parallel combining transformer’, Microw. Wirel. Compon. Lett., 2017, 27, (9), pp. 833–835 (doi: 10.1109/LMWC.2017.2734762).
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content/journals/10.1049/el.2018.1162
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