http://iet.metastore.ingenta.com
1887

185–220 GHz wideband amplifier in 40 nm CMOS

185–220 GHz wideband amplifier in 40 nm CMOS

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A 185–220 GHz four-stage differential wideband amplifier is presented. The bandwidth (BW) is significantly expended by using the coupled transmission line (CTL) technique and the staggered inter-stage wideband matching technique. CTL is adopted due to its high self-resonant frequency, high simulation accuracy, compact layout and wide BW characteristics. The amplifier achieves a peak gain of 10.1 and 3 dB BW of 35 GHz ranging from 185 to 220 GHz. With a supply voltage of 0.9 V, the amplifier consumes a DC power of 54.5 mW. The amplifier occupies a core area of 500 × 250 μm2 in 40 nm CMOS.

References

    1. 1)
    2. 2)
    3. 3)
      • 3. Thienen, N.V., Reynaert, P.: ‘A 160 GHz three-stage fully-differential amplifier in 40 nm CMOS’. 2014 21st IEEE Int. Conf. Electronics, Circuits and Systems (ICECS), Marseille, France, December 2014, pp. 144147.
    4. 4)
      • 4. Hara, S., Katayama, K., Takano, K., et al: ‘Compact 160 GHz amplifier with 15 dB peak gain and 41-GHz 3 dB bandwidth’. 2015 IEEE Radio Frequency Integrated Circuits Symp. (RFIC), Phoenix, AZ, USA, May 2015, pp. 710.
    5. 5)
      • 5. Park, D.W., Utomo, D.R., Hong, J.P., et al: ‘A 230–260 GHz wideband amplifier in 65 nm CMOS based on dual-peak Gmax core’. 2017 Symp. VLSI Circuits, Kyoto, Japan, June 2017, pp. C300C301.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.1135
Loading

Related content

content/journals/10.1049/el.2018.1135
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address