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access icon openaccess Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

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      • 3. Liu, Z.H., Ng, G.I., Zhou, H., et al: ‘Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation’, Appl. Phys. Lett., 2011, 98, (113506), pp. 13, doi: http://dx.doi.org/10.1063/1.3567927.
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      • 7. Cho, S.J., Wang, C., Kim, N.Y.: ‘Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition’, Thin Solid Films, 2012, 520, (13), pp. 44554458, doi: http://dx.doi.org/10.1016/j.tsf.2012.02.055.
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