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© The Institution of Engineering and Technology
Published 07/03/2018
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There is no abstract available for this article.

Inspec keywords: germanium compounds; copper compounds; phase change memories; phase change materials

Other keywords: bias polarity dependency; Ge2Cu2Te3; narrowing window; interface characteristics; electrodes; phase changing materials; phase change random access memory devices; PRAM devices

Subjects: Memory circuits; Semiconductor storage

References

    1. 1)
      • journal-id:.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.0672
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See Also
This article has the following associated article(s):
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory
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