access icon free Precharge free dynamic content addressable memory

A precharge free dynamic content addressable memory (DCAM) is introduced for low-power and high-speed search applications. Elimination of precharge prior to search allows hardware engine to perform more number of searches within the stipulated time. The proposed DCAM cell not only removes precharge of matchline (ML) but also utilises decoupling of bitline and searchline so that unwanted capacitive couplings are minimised at charge storage nodes. A 512 bit of the proposed scheme is implemented using 45 nm CMOS technology and its efficacy is verified and proved through rigorous variations with 1000-point Monte-Carlo sampling of ML voltage as well as multi-search dissipation analysis.

Inspec keywords: CMOS memory circuits; low-power electronics; content-addressable storage; Monte Carlo methods

Other keywords: storage capacity 512 bit; low-power applications; ML voltage; searchline decoupling; match line; CMOS technology; 1000-point Monte-Carlo sampling; multisearch dissipation analysis; precharge free dynamic content addressable memory; unwanted capacitive couplings; DCAM cell; bitline decoupling; charge storage nodes; high-speed search applications; hardware engine; size 45 nm

Subjects: Memory circuits; Monte Carlo methods; Monte Carlo methods; Semiconductor storage; Associative storage; CMOS integrated circuits

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.0592
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content/journals/10.1049/el.2018.0592
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