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High-speed FP GaN HEMT with f T /f MAX of 95/200 GHz

High-speed FP GaN HEMT with f T /f MAX of 95/200 GHz

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Highly scaled 90 nm gate-length field-plated (FP) aluminium gallium nitride (GaN)/GaN high electron mobility transistors (HEMTs) with a record current gain cut-off frequency (f T) of 95 GHz and maximum oscillation frequency (f MAX) of 200 GHz is reported. Both lateral scaling of source-to-drain distance to 1 μm and vertical scaling of gate-to-channel depth to 90 nm, along with n +-GaN ohmic contact, were utilised to minimise the parasitics, and the gate-length scaling of FP GaN HEMTs down to 90 nm gate length was demonstrated with a record speed performance for the first time. The small-signal model predicts that the f T is still dominated by the gate-to-source capacitance, implying that the speed performance of FP GaN HEMTs can further improve.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.0417
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