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16 W DBR-free membrane semiconductor disk laser with dual-SiC heatspreader

16 W DBR-free membrane semiconductor disk laser with dual-SiC heatspreader

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A record output power of 16.1 W with a direct-bonded dual-SiC-heatspreader distributed Bragg reflector (DBR)-free active region at 10.5°C coolant temperature is reported. A comparison in laser performance confirms the dual-heatspreader DBR-free configuration dissipates heat more effectively than the single-heatspreader geometry.

References

    1. 1)
      • 1. Okhotnikov, O.G.: ‘Semiconductor disk lasers: physics and technology’ (Wiley-VCH, Berlin, Germany, 2010).
    2. 2)
      • 2. Guina, M., Rantamäki, A., Härkönen, A.: ‘Optically pumped VECSELs: review of technology and progress’, J. Phys. D, Appl. Phys., 2017, 50, (383001), pp. 137.
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
      • 8. Yang, Z., Albrecht, A.R., Cederberg, J.G., et al: ‘80 nm tunable DBR-free semiconductor disk lasers’, Appl. Phys. Lett., 2016, 109, (022101), pp. 14.
    9. 9)
    10. 10)
      • 10. Broda, A., Kuzmicz, A., Rychlik, G., et al: ‘Highly efficient heat extraction by double-diamond heat-spreaders applied to a vertical external cavity surface-emitting laser’, Opt. Quant. Electron., 2017, 49, (287), pp. 17.
    11. 11)
      • 11. Giannini, N., Yang, Z., Albrecht, A.R., et al: ‘Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures’, SPIE Proc., 2017, 10121, (10121F), pp. 17.
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