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490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si

490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si

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We demonstrate, for the first time, a single section passively mode-locked InAs/InGaAs quantum dot laser directly grown on on-axis (001) GaP/Si substrate. The laser has a continuous-wave threshold current of 34 mA at 20°C. By forward biasing the laser gain section current at 470 mA, 490 fs pulse generation with 31 GHz repetition rate can be obtained. This simple femtosecond pulse generation structure with CMOS fabrication compatibility makes the laser a promising light source candidate in future large-scale silicon photonic applications.

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      • 10. Dong, M., Cundiff, S.T., Winful, H.G.: ‘Physics of frequency modulated comb generation in semiconductor diode lasers’. Nonlinear Optics, Waikoloa, United States, 17–21July 2017, p. M2A.4, doi: 10.1364/NLO.2017.NM2A.4.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.4639
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Correspondence
This article has following corresponding article(s):
A first for single-section QDML lasers on Si
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