access icon free High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.

Inspec keywords: Q-factor; III-V semiconductors; gallium arsenide; nanofabrication; indium compounds; optical fabrication; self-assembly; photonic crystals; nanophotonics; semiconductor quantum dots

Other keywords: semiconductor-based three-dimensional photonic crystal nanocavity; micromanipulation technique; GaAs; InAs; self-assembled quantum dots; near-infrared light emission; high-quality factor-nanocavities; in-plane area; InAs self-assembled quantum dots; gallium arsenide

Subjects: Nanophotonic devices and technology; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); II-VI and III-V semiconductors; Optical fabrication, surface grinding; Photonic band gap (condensed matter); Semiconductor superlattices, quantum wells and related structures; Optical materials; Nanophotonic devices and technology

References

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      • 10. Tajiri, T., Takahashi, S., Ota, Y., et al: ‘Guiding of laser light from a nanocavity in a three-dimensional photonic crystal’. 2017 Conf. on Lasers and Electro-Optics (CLEO), 2017, pp. 12.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.4542
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Correspondence
This article has following corresponding article(s):
world's highest Q-Factor