access icon free Open-loop per-pin skew compensation with lock fault detector for parallel NAND flash memory interface

An open-loop per-pin skew compensation with lock fault detection is presented. The proposed circuit employs an open-loop reference selector, a two-stage open-loop delay lock method which is separated by a coarse and fine lock for fast lock-in time, and a fault lock detecting scheme to prevent lock fault by dead zone of samplers. A unidirectional scan method ahead the fine lock stage to minimise pin-to-pin skew errors after calibration is also applied. The circuit was fabricated with 55 nm CMOS technology with a 1 V supply voltage and an area of 0.0036 mm2 for one de-skewing module. The measured result shows that the skew error at 1 GHz operation was reduced to <6 ps after skew calibration when the skew between input/output (IO) pins was 230 ps, and the lock-in time was 11 clock cycles.

Inspec keywords: flash memories; CMOS memory circuits; fault diagnosis; NAND circuits; delay lock loops; error compensation; detector circuits

Other keywords: de-skewing module; two-stage open-loop delay lock method; fast lock-in time; parallel NAND flash memory interface; skew calibration; IO pins; skew error; lock fault detector; open-loop reference selector; voltage 1 V; unidirectional scan method; frequency 1 GHz; size 55 nm; time 230 ps; fault lock detecting scheme; pin-to-pin skew errors minimization; open-loop per-pin skew compensation; sampler dead zone; TSMC CMOS technology

Subjects: Memory circuits; CMOS integrated circuits; Semiconductor storage; Modulators, demodulators, discriminators and mixers

References

    1. 1)
      • 1. Jang, Y.-C., Park, J.-Y., Shin, S., et al: ‘Self-calibrating transceiver for source synchronous clocking system with on-chip TDR and swing level control scheme’. Proc. Symp. VLSI Circuits, Kyoto, Japan, June 2009, pp. 5455.
    2. 2)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.4341
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