access icon free Investigating effect of temperature on barrier height of PWB diodes

The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.

Inspec keywords: gallium arsenide; aluminium compounds; III-V semiconductors; semiconductor doping; semiconductor diodes

Other keywords: planar-doped barrier diode; electric field; GaAs-AlGaAs; PDB diode; potential-well barrier diodes; barrier height; temperature 200 K to 380 K; gallium arsenide-aluminium gallium arsenide PWB diodes

Subjects: Semiconductor doping; Junction and barrier diodes

References

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      • 6. Sze, S.M.: ‘Physics of semiconductor devices’ (Wiley, New York, 1981).
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      • 2. Akura, M., Dunn, G., Sexton, J., et al: ‘GaAs/AlGaAs potential well barrier diodes: novel diode for detector and mixer applications’, Phys. Status Sol. A, 2017, 214, (10), pp. 1700290-11700290-7, doi: 10.1002/pssa.201700290.
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