access icon free Design of highly efficient broadband harmonic-optimised GaN power amplifier via modified simplified real frequency technique

A design of broadband power amplifier (PA) which uses harmonic-optimised matching network (MN) is designed to maintain high efficiency. The load–pull data is used to construct the optimal impedance areas in fundamental and harmonic parts. Then, the modified simplified real frequency technique algorithm is employed to design output-MN through constructing the defined harmonic-error functions. A 10 W Cree gallium nitride high-electron-mobility transistor device CGH40010F is used to validate this method. The proposed PA has a 40% bandwidth (1.8–2.7 GHz) and a 64–81% drain efficiency. The digital pre-distortion process shows the adjacent channel leakage ratio (ACLR) is <−52 dBc at 2.25 GHz.

Inspec keywords: UHF field effect transistors; UHF power amplifiers; wideband amplifiers; III-V semiconductors; wide band gap semiconductors; HEMT circuits; gallium compounds

Other keywords: load–pull data; efficiency 64 percent to 81 percent; highly efficient broadband harmonic-optimised power amplifier design; Cree gallium nitride high-electron-mobility transistor device CGH40010F; harmonic-error functions; modified simplified real frequency technique; power 10 W; MN design; harmonic-optimised matching network; GaN; frequency 1.8 GHz to 2.7 GHz

Subjects: Solid-state microwave circuits and devices; Analogue circuit design, modelling and testing; Amplifiers

References

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      • 6. Ma, L., You, F., Hou, X.: ‘An output match design method for high efficiency and broadband class-J PA’. 2014 IEEE Topical Conf. Power Amplifiers for Wireless and Radio Applications (PAWR), Newport Beach, CA, USA, January 2014.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.2849
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