Your browser does not support JavaScript!

Self-compared bit-line pairs for eliminating effects of leakage current

Self-compared bit-line pairs for eliminating effects of leakage current

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

This Letter proposes a new scheme to eliminate the bit-line leakage current of static random access memory. The proposed scheme utilises a four-input sense amplifier to amplify the voltages of self-compared bit-line pairs. The bit-lines of the proposed structure have no series capacitances and are directly connected to the sense amplifier input. By this way, read delay and error caused by the leakage current of bit-lines will be eliminated. Simulation results in SMIC 28 nm CMOS process design kits show that the proposed scheme has better stability and can decrease delay time by 41.1% at 0.9 V supply voltage compared with the X-Calibration technology.


    1. 1)
      • 5. Natarajan, A., Shankar, V., Maheshwari, A., et al: ‘Sensing design issues in deep submicron CMOS SRAMs’. IEEE Computer Society Symp. VLSI: New Frontiers in VLSI Design, Tampa, FL, USA, May 2005, pp. 4245.
    2. 2)
    3. 3)
    4. 4)
      • 2. Naeem, M., Bai-Sun, K.: ‘10T SRAM using half-VDD precharge and row-wise dynamically powered read port for low switching power and ultralow RBL leakage’, Trans. Very Large Scale Integr. (VLSI) Syst., 2016, PP, (99), pp. 11931203.
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)

Related content

This article has following corresponding article(s):
in brief
This is a required field
Please enter a valid email address