Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free Long-channel In0.7Ga0.3As/In0.52Al0.48As quantum-well MOSFETs on InP substrate with record μn_eff = 6960 cm2/V-s

Long-channel In0.7Ga0.3As/In0.52Al0.48As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with Lg = 4 μm exhibits excellent maximum transconductance (gm_max ) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain-induced-barrier-lowering < 40 mV/V and subthreshold-swing <100 mV/decade. Besides, the effective mobility (μn_eff ) of the same device has been extracted, revealing that the device in this work yields excellent μn_eff = 6960 cm2/V-s at room temperature. To the knowledge of the authors, the value of μn_eff in this work is the highest in any surface-channel InGaAs MOSFET technology.

References

    1. 1)
    2. 2)
    3. 3)
      • 7. Park, J.H., Kim, D.-K., Son, S.-W., et al: ‘A new unified mobility extraction technique of In0.7Ga0.3As QW MOSFETs’, Electron Device Lett., 2016, 37, (9), pp. 10961099.
    4. 4)
      • 8. Lin, J., Antoniadis, D.A., del Alamo, J.A.: ‘Novel intrinsic and extrinsic engineering for high-performance high-density self-aligned InGaAs MOSFETs: precise channel thickness control and sub-40-nm metal contacts’. Electron Devices Meeting, San Francisco, CA, USA, December 2014, pp. 574577.
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.0773
Loading

Related content

content/journals/10.1049/el.2017.0773
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
in brief
This is a required field
Please enter a valid email address