http://iet.metastore.ingenta.com
1887

32ps timing jitter with a fully integrated front end circuit and single photon avalanche diodes

32ps timing jitter with a fully integrated front end circuit and single photon avalanche diodes

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Excellent performance of custom technology SPAD detectors have been widely demonstrated in recent years. Low-jitter timing measurements with these detectors require front end electronics able to sense the avalanche current at a very low level when the multiplication process is still confined in a very small area around the photon absorption point. Best in class results (35 ps full width at half maximum) have been obtained with discrete circuits not suitable to be used in densely integrated systems of SPAD arrays required by modern demanding applications. A new fully integrated front end able to read out the avalanche current with a timing jitter as low as 32 ps and suitable to be exploited with SPAD arrays is presented.

References

    1. 1)
      • 1. Becker, W.: ‘Advanced time-correlated single photon counting applications’ (Springer International Publishing, Switzerland, 2015).
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • 5. Ghioni, M., Gulinatti, A., Rech, I., Maccagnani, P., Cova, S.: ‘Large-area low-jitter silicon single photon avalanche diodes’. Integrated Optoelectronic Devices, San Jose, USA, February 2008, pp. 69001D69001D, doi: 10.1117/12.761578.
    6. 6)
    7. 7)
    8. 8)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.4559
Loading

Related content

content/journals/10.1049/el.2016.4559
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address