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Improvement of turn-off energy loss (E off) variations by low Mg doping in p-GaN gate power devices

Improvement of turn-off energy loss (E off) variations by low Mg doping in p-GaN gate power devices

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In p-GaN gate AlGaN/GaN power devices, turn-off energy loss (E off) variations in die-level uniformity are observed because of the thickness variations of remained p-GaN in the ungated region. These E off variations can be reduced by negative turn-off gate voltages. However, this method can induce new burden in circuit design because of the negative voltages. Therefore, we focus on fabrication processes such as Mg doping in p-GaN gate. Using low Mg doping in p-GaN gate, E off variations mostly disappear, but threshold voltage (V th) is approximately 0.3 V decreases. In addition, dynamic on-resistance (dynamic R ds,on) is slightly increased.

References

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      • 2. Uemoto, Y., Morita, T., Ikoshi, A., et al: ‘GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate’. IEDM Technical Digest, 2009, pp. 165168.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.3820
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