Simulating the pre- and de-emphasis of drive voltages of silicon-based micro-ring ring-modulators

Simulating the pre- and de-emphasis of drive voltages of silicon-based micro-ring ring-modulators

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Integrated modulators are being intensely investigated and became potential candidates for the fundamental building blocks of next generation silicon-based front-end transceivers. Although suitable optical performance has been demonstrated in several works, theoretical models for the appropriate driving conditions of the micro-ring modulators are rarely explored. The carrier concentration fundamentally determines the refraction index of the pn junction of the modulator and to accelerate charge injection/extraction a pre- and de-emphasised driving voltage technique has been widely and successfully applied. Here we present a mathematical model where shooting amplitude and duration are considered with an optimised power consumption analysis. The model can be applied for both NRZ and RZ modulation formats.


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      • 5. Downing, A.J.N.: ‘Fiber optic communications’ (Cengage Learning, Australia, 2004, 1st edn.), p. 275.
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