http://iet.metastore.ingenta.com
1887

Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching

Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

GaSb-based type-I quantum wells cascade diode lasers with nearly diffraction limited output beam were fabricated using methane–hydrogen dry etching plasma process. Rapid thermal annealing was shown to be a necessary step to reverse the effect of hydrogen plasma on conductivity of AlGaAsSb cladding alloy. Annealed two-step narrow ridge lasers confined both optical field and current in lateral direction and demonstrated operating voltage, threshold current density and slope efficiency comparable to those of reference wide ridge devices.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.3394
Loading

Related content

content/journals/10.1049/el.2016.3394
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
in brief
This is a required field
Please enter a valid email address