access icon free Set/reset reference and parasitic matching scheme to speed up PCM read operation

Three kinds of parameters are considered to speed up the read operation of phase change memory: bit line parasitic parameters, read transmission gate parasitic parameters and current mirror parasitic parameters. A set reference cell and a reset reference cell are used in the reference circuit. Simulated in 130 nm process, the read access time of 1-Mb phase change memory (PCM) is 6.7 ns. In Monte Carlo simulations, the worst read access time is 13.8 ns compared to conventional 85 ns.

Inspec keywords: phase change memories; reference circuits; current mirrors; Monte Carlo methods

Other keywords: time 85 ns; reset reference cell; reference circuit; current mirror parasitic parameter; bit line parasitic parameter; size 130 nm; phase change memory; read transmission gate parasitic parameter; storage capacity 1 Mbit; parasitic matching scheme; PCM read operation; time 13.8 ns; Monte Carlo simulation; time 6.7 ns; set reference cell

Subjects: Semiconductor storage; Monte Carlo methods; Monte Carlo methods; Power electronics, supply and supervisory circuits; Amplifiers; Memory circuits

References

    1. 1)
    2. 2)
      • 4. Wang, Q., Li, X., Chen, H., et al: ‘Methods to speed up read operation in a 64mbit phase change memory chip’, Electron. Express, 2015, 12, (20), pp. 16.
    3. 3)
    4. 4)
      • 1. Burr, G.W., Brightsky, M.J., Sebastian, A., et al: ‘Recent progress in phase-change memory technology’, J. Emerging Sel. Top. Circuits Syst., 2016, 99, pp. 117.
    5. 5)
      • 6. Tsuchida, K., Inaba, T., Fujita, K., et al: ‘A 64 Mb MRAM with clamped-reference and adequate-reference schemes’. IEEE Int. Solid-state Circuits Conf. Digest of Technical Papers, San Francisco, CA, USA, February 2010, pp. 258259.
    6. 6)
      • 3. Hanzawa, S., Kitai, N., Osada, K., et al: ‘A 512 kB embedded phase change memory with 416kB/s write throughput at 100 μA cell write current’. IEEE Int. Solid-state Circuits Conf., San Francisco, CA, USA, February 2007, pp. 474616.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.3132
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