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High-frequency InGaAs tri-gate MOSFETs with f max of 400 GHz

High-frequency InGaAs tri-gate MOSFETs with f max of 400 GHz

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Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated f t and f max of 275 and 400 GHz at V DS = 0.5 V, which is the largest combined f t and f max, as well as the largest f max reported for all III–V MOSFETs.

References

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      • 2. Kim, D.-H., Brar, B., del Alamo, J.A.: ‘ft = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm’. Proc. of IEEE Int. Electron Device Meeting (IEDM), Washington DC, USA, December 2011, pp. 13.6.113.6.4, doi: 10.1109/IEDM.2011.6131548.
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      • 3. Zota, C.B., Wernersson, L.E., Lind, E.: ‘Single suspended InGaAs nanowire MOSFETs’. Proc. of IEEE Int. Electron Device Meeting (IEDM), Washington, D.C., December 2015, pp. 31.4.131.4.4, doi: 10.1109/IEDM.2015.7409808.
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