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100 Gb/s and 2 V Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure

100 Gb/s and 2 V Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure

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An ultra-high bandwidth (BW) and a low Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure is proposed. The combination of the n-i-p-n heterostructure and the capacitive-loaded travelling-wave electrode provides a modulator with extremely low electrical loss. The device exhibits a 3 dB electro-optic BW of over 67 GHz and a Vπ of 2.0 V. A 100 Gb/s non-return-to-zero on–off keying modulation with an extinction ratio of over 10 dB is also realised.

References

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    3. 3)
      • 3. Letal, G., Prosyk, K., Millett, R., et al: ‘Low loss InP C-band IQ modulator with 40 GHz bandwidth and 1.5 V Vπ’. Optical Fiber Communication Conf. (OFC) 2015, Th4E.3, Los Angeles, CA, USA, March 2015.
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      • 4. Poirier, M., Boudreau, M., Lin, Y., et al: ‘InP integrated coherent transmitter for 100 Gb/s DP-QPSK transmission’. Optical Fiber Communication Conf. (OFC) 2015, Th4F.1, Los Angeles, CA, USA, March 2015.
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      • 5. Rouvalis, E.: ‘Indium phosphide based IQ-modulators for coherent pluggable optical transceivers’. IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS) 2015, H2, New Orleans, LA, USA, October 2015.
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