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access icon free Robust fuzzy SRAM for accurate and ultra-low-power MVL and fuzzy logic applications

A fuzzy static RAM (SRAM) is proposed, which is applicable in fuzzy logic and many multiple-valued logic (MVL) applications. The new structure is basically an extension to the binary SRAM cell. Two cross-coupled voltage mirror circuits are used to be able to hold an arbitrary voltage value. The proposed design forms a robust and reliable structure, which is capable of operating with more than 95% accuracy in spite of imperfect fabrication of carbon nanotube FETs. Another exceptional advantage is its ultra-low-power consumption in MVL environments. It consumes 38.7 and 99% less static power compared with the SRAMs with regular ternary and quaternary components, respectively.

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.2932
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